Fit of temperature dependence of semiconductor band gaps

A numerical fit for the temperature dependence of semiconductor band gaps o f the form E-g(T) = E-g(0) - S[(h) over bar Omega][coth([(h) over bar Omega ]/2k(B)T) - 1] is applied to several important elemental and III-V compound semiconductors. From a systematic analysis, the relation between [(h) over bar Omega] and Debye temperature is derived, and a new effective coupling constant is defined to demonstrate the relative strength of the electron-ph onon interaction on the semiconductor band-gap energy.