Influence of buffer materials on the pyroelectric properties of (Pb0.9La0.1)TiO3 thin films

The effects of the LaNiO3 (LNO) and SrRuO5 (SRO) buffer lavers on the chara cteristics of the subsequently deposited (Pb0.9La0.1)TiO3 (PLT) thin films were examined. The Pt-layer precoated on Si-substrates results in tetragona l perovskite PLT/LNO/Pt/Si and PLT/SRO/Pt/Si films, which possess ferroelec tric properties superior to the cubic films (PLT/LNO/Si3N4/Si). Using SrRuO 3 layers in lieu of LaNiO3 layers as buffer materials significantly improve s the ferroelectric behavior of PLT thin films. The optimized electrical pr operties are: K = 460, P-r = 15 mu C/cm(2), E-c = 25 kV/cm, J(L) = 8 x 10(- 7) A/cm(2) (at 50 kV/cm) and p = 0.304 mu C/cm(2).K for the PLT/SRO/Pt/Si t hin films deposited at 500 degrees C substrate temperature.