High-quality epitaxial MnSi(111) layers grown in the presence of an Sb flux

MnSi epitaxial layers have been grown on (111) and (001)-oriented Si substr ates by Mn deposition and reaction with Si in the presence of an Sb flux. C haracterization using transmission electron microscopy (TEM) confirmed the formation of high-quality epitaxial layers with smooth interfaces between t he MnSi and the Si(111)substrate, when grown under optimal conditions, with out the deposition of elemental Sb or Sb-based compounds. MnSi layers are f ound to be rotated 30 degrees with respect to the Si(111) substrate to redu ce the lattice mismatch. Evidence only for the presence of MnSi was found a nd there was no evidence of any other Mn-Si phases. The additional formatio n of MnSb is found to depend on the rate of formation of MnSi, which is pri marily governed by the Mn flux rate and the growth temperature. By way of c omparison, polycrystalline mixed phase Mn-silicide layers were formed by di rect deposition of Mn and reaction with Si(111) at elevated temperatures in the absence of an Sb flux.