Heteroepitaxial growth of tin-doped indium oxide (ITO) and non-doped indium
oxide (IO) thin films was carried out on single-crystal yttria-stabilized
zirconia substrates by molecular beam epitaxy. The surface morphology of th
ese epitaxial films was characterized by scanning electron microscopy. The
doped ITO and non doped IO epitaxial films showed drastic changes in surfac
e morphology, which suggested that Sn acted not only as a dopant but also a
s a growth modifier for IO films. The surface morphology analysis of IO and
ITO films revealed a growth rate enhancement by Sn doping along the < 111
> direction.