Extremely high quantum photoyield from cesiated polycrystalline diamond films

Citation
M. Niigaki et al., Extremely high quantum photoyield from cesiated polycrystalline diamond films, JPN J A P 2, 37(12B), 1998, pp. L1531-L1533
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
37
Issue
12B
Year of publication
1998
Pages
L1531 - L1533
Database
ISI
SICI code
Abstract
An extremely high quantum photoyield, as high as 70% at the photon energy o f 10 eV, was observed from cesiated polycrystalline diamond films. The thre shold photon energy of 5.5 eV or less was observed. The results suggest tha t the cesiated polycrystalline diamond surface has a true negative electron affinity. In contrast, a quantum photoyield of 17% at the photon energy of 10 eV was observed for a hydrogenated polycrystalline diamond film. The th reshold photon energy of 5.5 eV or less was also observed, as in the cesiat ed one. It seems that the hydrogenated polycrystalline diamond surface has an effective negative electron affinity.