Sol-gel processing of bismuth strontium tantalate thin films

The synthesis of bismuth strontium tantalate thin films by alkoxide route a nd their ferroelectric properties were studied. It was found that single ph ase ferroelectric films with the thickness of 0.4-0.5 mu m could be formed by four repeated cycles of deposition of 2-ethylhexanoic acid solution of m etal alkoxides on Si-SiO2-Ti-Pt wafers followed by annealing in the tempera ture range of 700-750 degrees C for 30 min after each deposition. The films showed remanent polarization ranging from 3.5 to 4.0 mu C/cm(2) and coerci eve voltage 1.5-2.0 V.