Characterization of microstructural and piezoelectric properties of oriented PZT thin films obtained by pulsed laser deposition

Citation
P. Verardi et al., Characterization of microstructural and piezoelectric properties of oriented PZT thin films obtained by pulsed laser deposition, J PHYS IV, 8(P9), 1998, pp. 121-124
Citations number
10
Categorie Soggetti
Physics
Journal title
JOURNAL DE PHYSIQUE IV
ISSN journal
11554339 → ACNP
Volume
8
Issue
P9
Year of publication
1998
Pages
121 - 124
Database
ISI
SICI code
1155-4339(199812)8:P9<121:COMAPP>2.0.ZU;2-U
Abstract
The growing of oriented crystalline PZT films on silicon substrates at low substrate temperatures is reported. By varying the laser fluency and other deposition parameters we have been able to produce by a single step process highly oriented PZT films with good piezoelectric properties at much lower temperatures than reported in other PLD experiments. Film microstructural and compositional characterization as well as piezoelectric measurements ar e presented and discussed.