Epitaxial growth and electrical properties of PCLT thin films for IR detector sensor

Highly c-axis oriented Pb0.8Ca0.1La0.1Ti0.975O3/Y1Ba2Cu3O7-delta (PCLT/YBCO ) bilayer films have been grown in situ on LaAlO3 substrates for the first time using Nd:YAG pulsed laser deposition technique. X-ray diffraction and rocking curve measurements suggest epitaxial growth of both YBCO and PCLT o n LaAlO3 substrates. The film shows good ferroelectric properties (P-r = 28 .5 mu C/cm(2) and E-c = 145KV/cm) and exhibits a huge pyroelectric coeffici ent (gamma = 1.2 x 10(-7) C/cm(2)K) at room temperature. The figure of meri t for voltage responsivity F-v is as high as 1.97 x 10(-10) C cm/J, and the figure of merit for specific detectivity F-d is as high as 2.22 x 10(-8) C cm/J. These two parameters are almost twice as large as that of PLT10 and PLT15 films.