Growth of BST thin films on silicon substrates. Application to integrated capacitors for DC-DC converters

Citation
D. Chambonnet et al., Growth of BST thin films on silicon substrates. Application to integrated capacitors for DC-DC converters, J PHYS IV, 8(P9), 1998, pp. 213-216
Citations number
10
Categorie Soggetti
Physics
Journal title
JOURNAL DE PHYSIQUE IV
ISSN journal
11554339 → ACNP
Volume
8
Issue
P9
Year of publication
1998
Pages
213 - 216
Database
ISI
SICI code
1155-4339(199812)8:P9<213:GOBTFO>2.0.ZU;2-U
Abstract
Capacitor structures aiming at filtering and decoupling capacitors for DC-D C conversion, based on BST thin films, were deposited by PLD on silicon sub strates. The selection of the appropriate buffer layers and of a perovskite bottom electrode allowed the achievement of capacitor structures with the (100) texture. The specific capacitance values were measured on BaTiO3 film s grown on an YBCO bottom electrode around 80 nF/mm(2). The achievement of a (100) textured Sr(NbxTi1-x)O-y bottom electrode with a resistivity of aro und 100 mu Omega cm holds promise of large specific capacitance values in c ombination with low resistive losses.