D. Chambonnet et al., Growth of BST thin films on silicon substrates. Application to integrated capacitors for DC-DC converters, J PHYS IV, 8(P9), 1998, pp. 213-216
Capacitor structures aiming at filtering and decoupling capacitors for DC-D
C conversion, based on BST thin films, were deposited by PLD on silicon sub
strates. The selection of the appropriate buffer layers and of a perovskite
bottom electrode allowed the achievement of capacitor structures with the
(100) texture. The specific capacitance values were measured on BaTiO3 film
s grown on an YBCO bottom electrode around 80 nF/mm(2). The achievement of
a (100) textured Sr(NbxTi1-x)O-y bottom electrode with a resistivity of aro
und 100 mu Omega cm holds promise of large specific capacitance values in c
ombination with low resistive losses.