Large area pulsed laser deposited ferroelectric thin films of epitaxial Bi-layered perovskites on silicon

Ferroelectric thin films of Bi4Ti3O12 and SrBi2Ta2O9, have been deposited o n substrates up to 3 inches in diameter by the so-called off-axis Pulsed La ser Deposition technique. In order to promote epitaxial growth, the Bi4Ti3O 12 and SrBi2Ta2O9 thin films have been deposited onto epitaxial thin film t emplates of CeO2/YSZ and on the conductive oxide (La1-xSrx)CoO3 (LSCO) all deposited by off-axis PLD. The thickness and composition uniformity of the ferroelectric films, electrodes and buffer layers are important parameters with regard to their possible application. The thickness uniformities achie ved are in the range of 5% to 15% of the mean thickness.