Electrical properties of ferroelectric PZT films irradiated by oxygen ions

In this paper, ferroelectric and fatigue properties of PZT films irradiated by oxygen ions have been studied. The implantation suppresses the remanent polarization of the film because of the induced charges and displacement d amage, but it can be recovered after post annealing. Fatigue measurement sh ows that the polarization of film is rather stable along the switching cycl es when the sample is implanted with 5x10(12)/cm(2) to 2x10(13)/cm(2) O+ io ns, while it decreases after post annealing. We interpret such a fatigue be havior to arise from oxygen vacancy compensation.