Process and characterization of (Pb,La)TiO3 thin films deposited by MOCVD for gigabit DRAM application

Authors
Lee, SS Kang, YM Lee, J Lee, DH Kim, HG
Citation
Ss. Lee et al., Process and characterization of (Pb,La)TiO3 thin films deposited by MOCVD for gigabit DRAM application, J PHYS IV, 8(P9), 1998, pp. 269-272
Citations number
8
Categorie Soggetti
Physics
Journal title
JOURNAL DE PHYSIQUE IV
ISSN journal
11554339 → ACNP
Volume
8
Issue
P9
Year of publication
1998
Pages
269 - 272
Database
ISI
SICI code
1155-4339(199812)8:P9<269:PACO(T>2.0.ZU;2-K
Abstract
La-modified lead titanate. (Pb, La)TiO3. [PLT], thin films were deposited b y low pressure metal organic chemical vapor deposition (MOCVD) on Pt/SiO2/S i substrates. The composition of the films was studied with various deposit ion conditions. Also, the electrical properties. such as the dielectric con stant, the P-E hysteresis curve, and the leakage current density, were inve stigated with various annealing conditions. The experimental results show t hat the 180nm-thick PLT films with the La mole % of 12 are applicable as th e planar capacitor layer of 1 gigabit DRAM.