Postgrowth thermal treatment of CuIn(Ga)Se-2: Characterization of doping levels in In-rich thin films

Optical and electrical measurements were carried out on annealed CuIn(Ga)Se -2 (CIGS) thin films with Ga content of 10%. Annealing of as-grown In-rich CIGS in air/oxygen at 400 degrees C changes the photoluminescence spectrum to a spectrum which is usually obtained from as-grown Cu-rich CIGS. The ann ealing step reduces the donor density and the high compensation. This effec t allows the investigation of the defect levels of In-rich CIGS which is no t possible in as-grown layers due to the dominating fluctuating potentials. The activation energies for the donors and acceptors in In-rich CIGS were found to be 10 and 75 meV, respectively. The densities are in the order of 10(18) cm(-3) each, with a compensation ratio of 0.99. (C) 1999 American In stitute of Physics. [S0021-8979(99)08503-5].