Silicide formation in the Ta/Ti/Si system by reaction of codeposited Ta and Ti with Si (100) and Si (111) substrates

Codeposited Ta and Ti on Si (111) and Si (100) substrates were investigated at 1023, 1123, and 1223 K by x-ray diffraction and sheet resistance measur ements. Rapid thermal annealing at 1223 K resulted in a complete solid solu tion of (Ti, Ta)Si-2. A tendency for its formation was also observed at the lower temperatures of 1023 and 1123 K on Si (111) during the time interval up to 200-300 s used in this work. Complete solid solution is expected to form at sufficiently high temperatures when annealing time is long enough. The reaction rate of (Ti, Ta)Si-2 formation on Si(100) is appreciably lower than on Si(111). (C) 1999 American Institute of Physics. [S0021-8979(99)07 003-6].