Electrical and optical characterization of Er-doped silicon grown by liquid phase epitaxy

We have carried out deep level transient spectroscopy (DLTS), optical DLTS, and capacitance-voltage measurements on liquid phase epitaxy-grown Er-dope d Si to characterize the deep levels present in the material and to identif y those related to dislocations and involved in the luminescence activity. The optical properties of the material have been studied by photoluminescen ce, cathodoluminescence investigations, and two emission lines, labeled A a nd B, have been found, line A being located at 0.806 eV. We have observed t hat an actual interaction occurs between dislocations and Er-related emitti ng centers. (C) 1999 American Institute of Physics. [S002-18979(99)07903-7] .