Temperature dependence of the photoluminescence of all-porous-silicon optical microcavities

Citation
M. Cazzanelli et al., Temperature dependence of the photoluminescence of all-porous-silicon optical microcavities, J APPL PHYS, 85(3), 1999, pp. 1760-1764
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
85
Issue
3
Year of publication
1999
Pages
1760 - 1764
Database
ISI
SICI code
0021-8979(19990201)85:3<1760:TDOTPO>2.0.ZU;2-7
Abstract
Photoluminescence measurements in all-porous-silicon optical microcavities (PSM) are reported over a wide temperature range. Both continuous wave and time resolved measurements have been performed. The microcavity is formed b y an all porous silicon Fabry-Perot filter made by two distributed Bragg re flectors separated by a lambda-thick PS cavity layer. The luminescence prop erties of PSM are changed with respect to those of PS: a temperature indepe ndent narrowing in the emission line shape, a different temperature depende nce of the emission intensity, and a fractional shortening of the luminesce nce decay time over the 50-300 K temperature interval are achieved. The PSM luminescence properties are explained by the spatial redistribution of the spontaneous emission, by an effective refractive index probed by the photo n mode confined in the cavity layer and by the coupling between the singlet exciton state and the photon mode confined in the cavity layer. The satura tion of the absorption of the distributed Bragg reflector is also addressed . (C) 1999 American Institute of Physics. [S0021-8979(99)04503-X].