Fabrication of Co/Si nanowires by ultrahigh-vacuum scanning tunneling microscopy on hydrogen-passivated Si(100) surfaces

We have fabricated nanometer width Co/Si metal lines on Si(100) surfaces by ultrahigh-vacuum scanning tunneling microscopy (UHVSTM) based nanolithogra phy on the hydrogen-passivated surface, combined with vapor deposition of C o at room temperature and subsequent annealing. The STM tip was used to def ine depassivated lines (<10 nm in width) by electron stimulated hydrogen de sorption, and subsequently Co was deposited at a submonolayer coverage. Ann ealing of the substrate at 410 degrees C (just below hydrogen desorption) i mproves the structure of the wire due to silicidation, whereas the as-depos ited wire is very granular (comparable to other materials in previous studi es). (C) 1999 American Institute of Physics. [S0021-8979(99)02202-1].