Vn. Dobrovolsky et An. Krolevets, Theory of magnetic-field-sensitive metal-oxide-semiconductor field-effect transistors, J APPL PHYS, 85(3), 1999, pp. 1956-1960
Magnetic-field-sensitive metal-oxide-semiconductor field-effect transistors
(MAGFETs) are used as magnetic field sensors. The Hall effect in the high-
resistance channel region near the drain ensures a high magnetic field sens
itivity of the transistor. In this case, the channel is nonuniform, and thi
s fact presents difficulties when developing a Hall effect theory (the well
-known theory of the Hall effect for uniform wafers is now inapplicable). H
ere, we propose a method that reduces the theory of galvanomagnetic effects
in the MAGFETs with nonuniform channels to that for uniform wafers. Basing
on this method, as well as on the conformal mapping and the Hall field sym
metry, we calculate the Hall electromotive force in MAGFET channels with th
e Hall taps and split drain. The Hall current in MAGFETs with the split dra
in and split source is also obtained. It is shown that MAGFET magnetoresist
ance may be high. (C) 1999 American Institute of Physics. [S0021-8979(99)02
703-6].