Inductively coupled plasma etching of GaN using Cl-2/Ar and Cl-2/N-2 gases

Citation
Jk. Sheu et al., Inductively coupled plasma etching of GaN using Cl-2/Ar and Cl-2/N-2 gases, J APPL PHYS, 85(3), 1999, pp. 1970-1974
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
85
Issue
3
Year of publication
1999
Pages
1970 - 1974
Database
ISI
SICI code
0021-8979(19990201)85:3<1970:ICPEOG>2.0.ZU;2-B
Abstract
This work investigates inductively coupled plasma (ICP) etching processes o f GaN. Etching behaviors are also characterized by varying the ICP power, C l-2/Ar or Cl-2/N-2 mixing ratio, radio-frequency (rf) power, and chamber pr essure. Experimental results indicate that the etching profiles are highly anisotropic over the range of etching conditions. Maximum etching rates of 8200 Angstrom/min in Cl-2/Ar plasma and 8330 Angstrom/min in Cl-2/N-2 plasm a are obtained as well. In addition, pressure, ICP power, Cl-2/Ar(N-2) flow ratio and rf power significantly influence etching rate and surface morpho logy. In particular, dc bias heavily influences the etching rates, suggesti ng that the ion-bombardment effect is an important factor of these etching processes. (C) 1999 American Institute of Physics. [S0021-8979(99)03903-1].