Nowadays, the development of power semiconductors has made that fuses
used for their protection have to be improved. The high working freque
ncy of IGBT leads to a modification of fuse characteristics. For high
frequencies, it may occur a bad working due to an unequal current dist
ribution between two fuses in parallel, or even between fuse's element
s. The result is that fuse operates at below rated current. This unexp
ected operation can be attributed to proximity effects which are conse
quences of electromagnetic laws between close conductors. To prevent s
uch a failure, their current rating must be reduced as a function of f
requency and distance between the fuselink and other conductors (e.g.
the return conductor).