A de discharge generated between parallel plate electrodes are studied
. The spatial stabilization of the gas discharge with the semiconducti
ng Si at 90 K have been studied in a wide range of the gas pressure p,
(21.3-466.5 hPa) and of inter-electrode distance d (10 mu m - 5 mm) f
or the first time. The cathode was irradiated on the back-side With li
ght in a particular wavelength range that was used to control the phot
oconductivity of the material. The semiconductor material was found to
''stabilize'' the discharge. The stable functioning of the ionization
system at pressures of 21.3-466.5 hPa with a gap value of 10 - 100 mu
m and the photocurrent density about 10(-4) A cm(-2) is possible.