A new analysis method to characterize the S-band luminescence decay of porous Si

Citation
Jq. Yu et al., A new analysis method to characterize the S-band luminescence decay of porous Si, J LUMINESC, 81(1), 1999, pp. 1-6
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF LUMINESCENCE
ISSN journal
00222313 → ACNP
Volume
81
Issue
1
Year of publication
1999
Pages
1 - 6
Database
ISI
SICI code
0022-2313(199901)81:1<1:ANAMTC>2.0.ZU;2-O
Abstract
Analysis of the non-exponential luminescence decay and extraction of additi onal physical information from it are important issues for the spectroscopi c study of porous Si. In this work a new approach to extract the decay time distribution function is proposed, based on the fact that the non-exponent ial luminescence decay of porous Si is a multiple exponential. It was found that the integrated intensities of different exponential components could be fitted by a Gaussian distribution function, characterized by tau(0), the decay time with maximum probability, and d, the width of the Gaussian dist ribution function. The parameters tau(0) and d were found to vary with emis sion wavelengths, tau(0) decreases exponentially with an increase of the em ission energy and d has a smaller value in the middle of the emission wavel engths. (C) 1999 Elsevier Science B.V. All rights reserved.