Studies on In doped CdTe co-sputtered films

Indium doped CdTe polycrystailine films were grown on Coming glass substrat es at room temperature by co-sputtering from CdTe-In-Cd targets. The chemic al composition, structural, electrical, and optical properties of the films were analyzed as a function of the In and Cd concentrations on the target. Two types of films were prepared: those in which the Cd concentration on t he target was varied and the In kept at a fixed concentration and vice vers a. From the experimental results, we concluded that using this deposition m ethod n-type In doped CdTe polycrystalline films can be produced with elect rical resistivity between 10(2) and 10(3) Omega cm and electron mobility be tween 10(2) and 10(3) cm(2) V-1 s(-1). (C) 1998 Elsevier Science Ltd. All r ights reserved.