The growth of vacuum deposited lead phthalocyanine thin films and its effects on gas sensing

Citation
Yh. Ju et al., The growth of vacuum deposited lead phthalocyanine thin films and its effects on gas sensing, J CH INST C, 29(6), 1998, pp. 415-420
Citations number
15
Categorie Soggetti
Chemical Engineering
Journal title
JOURNAL OF THE CHINESE INSTITUTE OF CHEMICAL ENGINEERS
ISSN journal
03681653 → ACNP
Volume
29
Issue
6
Year of publication
1998
Pages
415 - 420
Database
ISI
SICI code
0368-1653(199811)29:6<415:TGOVDL>2.0.ZU;2-1
Abstract
The morphology and crystal structure of vapor-deposited lead phthalocyanine (PbPc) thin film depends on the substrate temperature and deposition rate. In the range of substrate temperature (25-250 degrees C) and deposition ra te (0.1-5 nm/s) employed for the growth of PbPc thin films in this work, lo w substrate temperature and high deposition rate favor the formation of amo rphous films. On the other hand, high substrate temperature and low deposit ion rate yield beta phase film with high crystallinity. (alpha phase film c an be obtained under moderate substrate temperature and deposition rate. Fi lm with beta structure has the slowest response in gas sensing due to its l arger particle size while amorphous film with its porous structure has the fastest response in gas sensing.