Diagnostics of the diamond depositing inductively coupled plasma by electrostatic probes and optical emission spectroscopy

Authors
Citation
K. Teii, Diagnostics of the diamond depositing inductively coupled plasma by electrostatic probes and optical emission spectroscopy, J VAC SCI A, 17(1), 1999, pp. 138-143
Citations number
27
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
07342101 → ACNP
Volume
17
Issue
1
Year of publication
1999
Pages
138 - 143
Database
ISI
SICI code
0734-2101(199901/02)17:1<138:DOTDDI>2.0.ZU;2-W
Abstract
Electrostatic probe methods and optical emission spectroscopy have been use d for diagnostics of the low-pressure inductively coupled radio frequency p lasma at pressures between 5 and 80 mTorr under real environments of diamon d deposition. The single, triple, and emissive probe methods were used alon e or combined to obtain electron temperature (T-e) and electron density (n( e)). The single or triple probe method combined with the emissive probe met hod allowed the determination of n(e) with high reliability as confirmed by cross-checking. Comparison with the grown deposits suggested the existence of a critical n(e) value of around 2 X 10(10) cm(-3), which was responsibl e fur the drastic decrease in diamond growth rate observed below 10 mTorr a nd the resulting no growth at around 5 mTorr. The energy distribution of ex citation levels of the H atom Balmer series was almost constant and the dis tribution equilibrium was not established except the case of 5 mTorr, which was ascribed to the difference in the excitation process of H atoms. (C) 1 999 American Vacuum Society. [S0734-2101(99)05101-5].