Deposition of amorphous hydrogenated silicon (alpha-Si : H): in situ gas analysis by time-of-flight mass spectrometry

Authors
Andra, G Falk, F Stafast, H Witkowicz, E
Citation
G. Andra et al., Deposition of amorphous hydrogenated silicon (alpha-Si : H): in situ gas analysis by time-of-flight mass spectrometry, MONATS CHEM, 130(1), 1999, pp. 221-225
Citations number
9
Categorie Soggetti
Chemistry
Journal title
MONATSHEFTE FUR CHEMIE
ISSN journal
00269247 → ACNP
Volume
130
Issue
1
Year of publication
1999
Pages
221 - 225
Database
ISI
SICI code
0026-9247(199901)130:1<221:DOAHS(>2.0.ZU;2-Y
Abstract
Time-of-flight mass spectra generated by ArF laser photoionization have bee n obtained in a molecular beam effusing from an a-Si:H deposition system wi th a de discharge in a gas mixture of SiH4 and He. The XeF, KrF, and ArF la ser wavelength dependence and the kinetics of the SiH0-3+ and the Si2H0-2signals show that the ions predominantly originate from disilane.