G. Andra et al., Deposition of amorphous hydrogenated silicon (alpha-Si : H): in situ gas analysis by time-of-flight mass spectrometry, MONATS CHEM, 130(1), 1999, pp. 221-225
Time-of-flight mass spectra generated by ArF laser photoionization have bee
n obtained in a molecular beam effusing from an a-Si:H deposition system wi
th a de discharge in a gas mixture of SiH4 and He. The XeF, KrF, and ArF la
ser wavelength dependence and the kinetics of the SiH0-3+ and the Si2H0-2signals show that the ions predominantly originate from disilane.