Citation
J. Zeman et al., Pressure dependence of the band gap of 4H-SiC, PHYS ST S-B, 211(1), 1999, pp. 69-72
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972
→ ACNP
Volume
211
Issue
1
Year of publication
1999
Pages
69 - 72
Database
ISI
SICI code
0370-1972(199901)211:1<69:PDOTBG>2.0.ZU;2-2
Abstract
Excitonic photoluminescence in 4H-SiC unintentionally doped with nitrogen w
as investigated under hydrostatic pressure up to 5 GPa. The pressure coeffi
cient of Q(0) exciton line was determined to be +2.7 meV/GPa. This value me
asures the pressure coefficient of the indirect gap of 4H-SiC. It compares
very well with the results of theoretical calculations based on local densi
ty functional theory which predicts +2.1 meV/GPa.