Pressure-induced Gamma-X crossover in self-assembled In(Ga)As/GaAs quantumdots

Authors
Lyapin, SG Itskevich, IE Trojan, IA Klipstein, PC Polimeni, A Eaves, L Main, PC Henini, M
Citation
Sg. Lyapin et al., Pressure-induced Gamma-X crossover in self-assembled In(Ga)As/GaAs quantumdots, PHYS ST S-B, 211(1), 1999, pp. 79-83
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
211
Issue
1
Year of publication
1999
Pages
79 - 83
Database
ISI
SICI code
0370-1972(199901)211:1<79:PGCISI>2.0.ZU;2-C
Abstract
We report low-temperature photoluminescence (PL) studies of In(Ga)As/GaAs s elf-assembled quantum dots at hydrostatic pressures of up to 9 GPa. Observa tion of the Gamma-X crossover between electron states confined in the dots and X-valley states in the GaAs matrix allows us to evaluate separately the energies of the electron and hole confined states.