Photoluminescence studies on self-organized InAlAs/AlGaAs quantum dots under pressure

Authors
Phillips, JD Bhattacharya, PK Venkateswaran, UD
Citation
Jd. Phillips et al., Photoluminescence studies on self-organized InAlAs/AlGaAs quantum dots under pressure, PHYS ST S-B, 211(1), 1999, pp. 85-89
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
211
Issue
1
Year of publication
1999
Pages
85 - 89
Database
ISI
SICI code
0370-1972(199901)211:1<85:PSOSIQ>2.0.ZU;2-W
Abstract
The pressure dependence of the low temperature photoluminescence (PL) in se lf-organized In0.5Al0.5As/Al0.25Ga0.75As quantum dots (QD) has been investi gated up to 8 GPa. Interesting features of the QD PL observed in our study are: (i) a decrease in the linewidth up to 1.8 GPa, (ii) no significant shi ft in the PL energy between 0.8 and 2.2 GPa, (iii) anticrossing behavior in the region of 2.2 to 2.6 GrPa, and (iv) complete quenching of PL beyond 2. 6 GPa. The observed pressure behavior is explained on the basis of the cros sing between Gamma and X conduction bands.