The pressure dependence of the low temperature photoluminescence (PL) in se
lf-organized In0.5Al0.5As/Al0.25Ga0.75As quantum dots (QD) has been investi
gated up to 8 GPa. Interesting features of the QD PL observed in our study
are: (i) a decrease in the linewidth up to 1.8 GPa, (ii) no significant shi
ft in the PL energy between 0.8 and 2.2 GPa, (iii) anticrossing behavior in
the region of 2.2 to 2.6 GrPa, and (iv) complete quenching of PL beyond 2.
6 GPa. The observed pressure behavior is explained on the basis of the cros
sing between Gamma and X conduction bands.