Si. Budzulyak et al., Breakdown of donor localized states on the insulating side of strain-induced MI transitions in Si and Ge, PHYS ST S-B, 211(1), 1999, pp. 137-142
Localization of electrons on hydrogenic impurity atoms in Si and Ge and the
ir delocalization by electric field breakdown of the localized states were
examined on the insulating side of a strain-induced metal-nonmetal transiti
on. Both nonlinear and linear dependencies of the breakdown field on activa
tion energy were obtained. Experimental results were explained taking into
account a crucial transformation of silicon and germanium conduction band s
tructure under extremely high uniaxial pressure.