The modelling of the geometric structure, vibrational and electronic proper
ties of a single-wall fullerene nanotube versus the external pressure is ca
rried out. It is shown that the presence of a heptagon-heptagon pair as a d
efect in the structure of this nanotube leads to the formation of a semicon
ductor-semiconductor heterojunction with different values of the gap. The o
btained theoretical results are compared with available experimental data.