Decay process of photoluminescence in CdMnTe

Citation
J. Nakahara et al., Decay process of photoluminescence in CdMnTe, PHYS ST S-B, 211(1), 1999, pp. 223-231
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
211
Issue
1
Year of publication
1999
Pages
223 - 231
Database
ISI
SICI code
0370-1972(199901)211:1<223:DPOPIC>2.0.ZU;2-R
Abstract
Photoluminescence (PL) spectra, time profiles of PL intensity and PL excita tion spectra (PLE) for inter 3d multiplets (3d-MS) transition of Mn2+ are o bserved in the semimagnetic semiconductor CdMnTe under high pressures. Thos e of inter 3d-MS and inter quantum levels (QL) transitions are also observe d in quantum wells (CdTe/Cd0.4Mn0.6Te). The decay processes in these excite d states are discussed. The decay process to the excited states of infrared photoluminescence is also discussed for various concentrations. In these e xcited states it is considered that large lattice relaxation is essential.