Time-resolved photoluminescence study of GaAs ordered GaInP interface under high pressure

We have measured the photoluminescence (PL) spectra of GaAs/GaInP single qu antum wells at pressure up to approximate to 5 GPa, and investigated the ch aracteristics of the 1.46 eV deep emission band. It has a very long decay t ime of several hundred nanoseconds. In addition, unlike the emission from t he GaAs well, a strong blue-shift of its peak energy with excitation intens ity is observed. With increasing pressure, the emission peak shows a sublin ear shift towards higher energy, while the GaAs quantum well exhibits a lin ear peak shift. The pressure dependence of the spectral peak position at hi gher excitation intensity tends to reflect that of the adjacent 1.49 eV emi ssion band which has a faster decay profile. The pressure-dependent PL beha vior at lower excitation intensity is rather similar to those observed for partially ordered GaInP alloys. These results suggest that the presence of ordered GaInP layers plays an important role in the radiative recombination at 1.46 eV and the deep emission is related to the transitions of electron s and holes localized at the GaAs/ordered GaInP heterointerface.