High pressure EXAFS on GaTe single crystal including polarization

Citation
J. Pellicer-porres et al., High pressure EXAFS on GaTe single crystal including polarization, PHYS ST S-B, 211(1), 1999, pp. 389-393
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
211
Issue
1
Year of publication
1999
Pages
389 - 393
Database
ISI
SICI code
0370-1972(199901)211:1<389:HPEOGS>2.0.ZU;2-2
Abstract
The evolution of the local structure in GaTe under pressure is studied by X -ray absorption spectroscopy (XAS) at the Ga K-edge (10.368 keV) on oriente d single crystals. The use of the linear polarization of the synchrotron ra diation has allowed to determine the pressure evolution of both the Ga-Te a nd the in-plane Ga-Ga bond lengths, in spite of the small XAS signal of the latter. Our measurements show that both distances are much less compressib le than what could be inferred from the bulk compressibility, indicating a significant variation of Ga-Ga-Te and Te-Ga-Te angles under compression. In the high-pressure NaCl phase, no anisotropy of the XAS spectrum is detecte d and local and bulk compressibilities coincide.