Evidence of weak localization in a two-dimensional electron gas from studies of pressure-induced semimetal-semiconductor-insulator transitions in GaSb/InAs/GaSb quantum wells

Authors
Dizhur, EM Voronovsky, AN
Citation
Em. Dizhur et An. Voronovsky, Evidence of weak localization in a two-dimensional electron gas from studies of pressure-induced semimetal-semiconductor-insulator transitions in GaSb/InAs/GaSb quantum wells, PHYS ST S-B, 211(1), 1999, pp. 449-454
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
211
Issue
1
Year of publication
1999
Pages
449 - 454
Database
ISI
SICI code
0370-1972(199901)211:1<449:EOWLIA>2.0.ZU;2-P
Abstract
Previously reported experimental data on the pressure dependence of quasi-t wo-dimensional electron transport in GaSb/InAs/GaSb quantum wells revealed a negative magnetoresistance region (NMR) that appears after transition fro m the semimetallic to the semiconducting regime, and that persists under pr essure up to the vicinity of metal-insulator transition. This report is an attempt to treat this phenomenon in terms of weak localization in the 2D sy stem.