Citation
V. Kravchenko et al., Hole-hole scattering in p-GaAs/AlGaAs heterostructures under uniaxial compression, PHYS ST S-B, 211(1), 1999, pp. 545-551
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972
→ ACNP
Volume
211
Issue
1
Year of publication
1999
Pages
545 - 551
Database
ISI
SICI code
0370-1972(199901)211:1<545:HSIPHU>2.0.ZU;2-U
Abstract
Resistance, magnetoresistance and their temperature dependences observed in
the range of low and intermediate magnetic fields in a 2D hole gas at the
[001] p-GaAs/Al0.5Ga0.5As heterointerface show a strong decrease under [110
] uniaxial compression. The analysis performed in the framework of hole-hol
e scattering between carriers in the two subbands of the spin-split ground
heavy hole state indicates strong suppression of hole-hole scattering by un
iaxial compression of 0.13 GPa.