Mobility of holes and suppression of antiferromagnetic order in La2-xSrxCuO4

Authors
Hucker, M Kataev, V Pommer, J Harrass, J Hosni, A Pflitsch, C Gross, R Buchner, B
Citation
M. Hucker et al., Mobility of holes and suppression of antiferromagnetic order in La2-xSrxCuO4, PHYS REV B, 59(2), 1999, pp. R725-R728
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
59
Issue
2
Year of publication
1999
Pages
R725 - R728
Database
ISI
SICI code
0163-1829(19990101)59:2<R725:MOHASO>2.0.ZU;2-3
Abstract
We have measured the static magnetic susceptibility and the resistivity of Zn(0 less than or equal to z less than or equal to 0.25) and Sr (0 less tha n or equal to x less than or equal to 0.03) doped La2CuO4. Our data clearly show that Zn impurities lead to an increase of the Neel temperature T-N in weakly hole doped compounds. This increase of T-N correlates with an incre ase of the resistivity. The analysis of our data strongly suggests that the hole mobility is the most important source for the strong suppression of a ntiferromagnetic order in La2-xSrxCuO4. [S0163-1829(99)50102-1].