Far-infrared vibrational mode in Cu1-xMxGe1-ySiyO3 (M=Zn,Cd,Ni)

Citation
Jj. Mcguire et al., Far-infrared vibrational mode in Cu1-xMxGe1-ySiyO3 (M=Zn,Cd,Ni), PHYS REV B, 59(2), 1999, pp. 1157-1161
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
59
Issue
2
Year of publication
1999
Pages
1157 - 1161
Database
ISI
SICI code
0163-1829(19990101)59:2<1157:FVMIC(>2.0.ZU;2-D
Abstract
We report on far-infrared measurements of Zn-, Cd-, and Ni-doped crystals o f the spin-Peierls compound CuGeO3. Dopants that replace Cu have the effect of introducing several absorption lines, polarized in the ab plane, betwee n 5 and 55 cm(-1). The intensity of the absorption grows with dopant concen tration but saturates above 2%. One line near 10 cm(-1) loses intensity abo ve 4 K, and a second line near 20 cm(-1) is absent at low temperatures but grows to peak at about 40 K in agreement with a three-level model with two excited states 10 and 30 cm(-1) above the ground state. As the doping is in creased these Lines broaden and a temperature-independent absorption develo ps over the entire range from 5 to 55 cm-l. These features are magnetic-fie ld independent up to 16 T and are absent in samples doped with Si that repl aces Ge instead of Cu. We suggest the new absorption is due to localized la ttice modes of the dopant ion and the surrounding GeO4 tetrahedra. [S0163-1 829(99)05202-9].