Charge density wave gap formation of NbSe3 detected by electron tunneling

Authors
Citation
Hf. He et Dl. Zhang, Charge density wave gap formation of NbSe3 detected by electron tunneling, PHYS REV L, 82(4), 1999, pp. 811-814
Citations number
16
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
82
Issue
4
Year of publication
1999
Pages
811 - 814
Database
ISI
SICI code
0031-9007(19990125)82:4<811:CDWGFO>2.0.ZU;2-E
Abstract
Tunneling spectra of NbSe3 between 77 K and room temperature have been meas ured carefully. A charge density wave (CDW) pseudogap exists up to a temper ature higher than similar to 260 K. While the gap parameter undergoes an ac celerated change between similar to 130 and similar to 160 K, the junction conductance at zero bias does not show any anomaly around T-1 = 145 K, the upper CDW transition temperature. Below the mean field transition temperatu re there are four regimes: a regime where a true CDW state exists, a regime where pinned and mobile CDW coexist, a regime of a pseudogap, and a regime where the CDW fluctuation can barely be detected by current measurements.