Zr-Ce oxides as candidates for optically passive counter electrodes

Citation
M. Veszelei et al., Zr-Ce oxides as candidates for optically passive counter electrodes, SOL EN MAT, 56(3-4), 1999, pp. 223-230
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
09270248 → ACNP
Volume
56
Issue
3-4
Year of publication
1999
Pages
223 - 230
Database
ISI
SICI code
0927-0248(19990130)56:3-4<223:ZOACFO>2.0.ZU;2-H
Abstract
Zr-Ce oxide films with compositions from pure Zr oxide to pure Ce oxide wer e made by reactive DC magnetron co-sputtering. The composition and structur e were determined by Rutherford backscattering and X-ray diffraction. Pure Ce oxide films have high charge capacity and are optically passive under ch arge insertion; they are, however, chemically unstable in an electrolyte of LiClO4 in propylene carbonate. Pure Zr oxide has practically zero charge c apacity. Zr-Ce oxide films have high (above 80%) optical transmittance, hig h charge capacity, and good chemical stability. These films remain fully tr ansparent irrespective of their degree of lithiation, which may be reconcil ed with electrons accommodating 4f states of Ce. (C) 1999 Elsevier Science B.V. All rights reserved.