TEM study of InAs self-assembled quantum dots in GaAs

Authors
Muller, E Ribeiro, E Heinzel, T Ensslin, K Medeiros-Ribeiro, G Petroff, PM
Citation
E. Muller et al., TEM study of InAs self-assembled quantum dots in GaAs, THIN SOL FI, 336(1-2), 1998, pp. 38-41
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
336
Issue
1-2
Year of publication
1998
Pages
38 - 41
Database
ISI
SICI code
0040-6090(199812)336:1-2<38:TSOISQ>2.0.ZU;2-#
Abstract
InAs self-assembled quantum dots grown on GaAs(001) substrate vr ere invest igated by TEM as well as by electrical transport measurements. The TEM anal ysis revealed the presence of a complicated triple-layer structure instead of simple dots far high In-concentrations. The electrical measurement sugge st that the dots act as controllable scattering centers. A saturation of th e mobility is observed for the highest dot density samples. (C) 1998 Elsevi er Science S.A. All rights reserved.