Patterned unheated Si(100) substrates in the form of the regular tetragonal
pyramids and a structure like hemispherical plates have been found to be e
ffective for a pulse vacuum thermal deposition (pulse-VTD) of GaAs and GaP
thin layers (50-500 nm), The effect of the pulse VTD technological paramete
rs (pulse duration, pulse period, pulse number, pulse current) and the feat
ures of the substrate patterns (terraces, steps, kinks, sponges) on the mor
phology, the composition and the crystallinity of GaAs and GaP layers have
been characterized by scanning electron microscopy, electron X-ray analysis
and electron diffraction. (C) 1998 Elsevier Science S.A. All rights reserv
ed.