Study of InAs quantum dots in GaAs prepared on misoriented substrates

Optical properties of quasi zero-dimensional semiconductor quantum dots wer e studied by photoluminescence and Raman spectroscopy. The dependence of ph otoluminescence on substrate orientation and Raman spectra of single and mu ltiple InAs/GaAs quantum dot structures are reported. The samples were grow n on (100) oriented GaAs substrates without and with 3 degrees misorientati on towards (110) by metal-organic vapor phase epitaxy in the Stranski-Krast anow regime. Strong dependence of photoluminescence properties of the quant um dot structures on substrate misorientation is shown. The InAs-related fe atures an observed in the macro-Raman spectra and micro-Raman spectra. The effects of confinement, alloying and strain on PL and on phonon spectra are discussed. (C) 1998 Elsevier Science S.A. All rights reserved.