Citation
C. Bisch et al., Orientation of aluminum nuclei on Si(100) and Si(111), THIN SOL FI, 336(1-2), 1998, pp. 84-88
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090
→ ACNP
Volume
336
Issue
1-2
Year of publication
1998
Pages
84 - 88
Database
ISI
SICI code
0040-6090(199812)336:1-2<84:OOANOS>2.0.ZU;2-2
Abstract
Aluminum has been deposited by chemical vapor deposition from dimethyl alum
inum hydride onto silicon. Deposition conditions were chosen such that the
deposition was selective onto silicon with respect to silicon dioxide. The
crystal orientation of the nuclei has been studied. It is shown that on Si(
100) the preferred mode of growth for the aluminum nuclei is Al(111). (C) 1
998 Elsevier Science S.A. All rights reserved.