Electrical properties of HgCdTe films obtained by laser deposition

HgCdTe thin films have been obtained on the Al2O3 surface by the pulse lase r deposition method in dynamic vacuum. Films grown at the temperature windo w of 470-490 K exhibit relatively small electrical resistance. The resistan ce-temperature characteristics of the films are compared to those of the ta rget and they clearly point to intrinsic and impurity regions. The temperat ure dependency of the Hall coefficient, the stationary and kinetic photocon ductivity of the layers as well as the life time of charge carriers have be en studied. (C) 1998 Elsevier Science S.A. All rights reserved.