The growth of an intermediate CoSi phase during the formation of epitaxialCoSi2 by solid phase reaction

Citation
M. Falke et al., The growth of an intermediate CoSi phase during the formation of epitaxialCoSi2 by solid phase reaction, THIN SOL FI, 336(1-2), 1998, pp. 201-204
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
336
Issue
1-2
Year of publication
1998
Pages
201 - 204
Database
ISI
SICI code
0040-6090(199812)336:1-2<201:TGOAIC>2.0.ZU;2-4
Abstract
Among the epitaxial transition metal silicides CoSi2 is of special interest for applications in ULSI technology due to its high thermal stability and low electrical resistivity. The solid phase reaction of metallic bilayers w ith Si in an N-2 ambient is a well-known process for growing epitaxial CoSi 2. However, the real function of the so-called diffusion barrier, which is arising during the annealing process, remains unclear. TEM studies revealed the intermediate, growth of a CoSi phase with grains of preferred orientat ion to Si. The growth of this phase raises the temperature of CoSi2 nucleat ion, which starts at the CoSi/Si interface. The nucleation temperature dete rmines the quality of the growing epitaxial CoSi2, which is better for Ti a s a barrier forming material than for Hf, also used successfully. Whether a n intermediate oriented growth of CoSi is promoting the epitaxial quality o f CoSi2 otherwise than by shifting the nucleation temperature, remains an o pen question. (C) 1998 Elsevier Science S.A. All rights reserved.