Valence band splitting in Cd(1-x)ZnxTe epilayers

Citation
K. Cohen et al., Valence band splitting in Cd(1-x)ZnxTe epilayers, THIN SOL FI, 336(1-2), 1998, pp. 205-207
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
336
Issue
1-2
Year of publication
1998
Pages
205 - 207
Database
ISI
SICI code
0040-6090(199812)336:1-2<205:VBSICE>2.0.ZU;2-M
Abstract
We present the first experimental evidence for the breaking of the cubic sy mmetry in the band structure of CdZnTe epilayers deposited by metal-organic chemical vapor deposition (MOCVD). Polarized PL measurements along [110] a nd [(1) over bar 10] directions were performed and the valence band splitti ng (VBS) was determined. Growth conditions (growth temperature and partial pressure ratio) and type and misorientation of the substrates an correlated to the VBS of Cd1-xZnxTe epilayers. (C) 1998 Elsevier Science S.A. All rig hts reserved.