Lateral ordering of self-assembled Ge islands

Authors
Zhu, JH Brunner, K Abstreiter, G Kienzle, O Ernst, F
Citation
Jh. Zhu et al., Lateral ordering of self-assembled Ge islands, THIN SOL FI, 336(1-2), 1998, pp. 252-255
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
336
Issue
1-2
Year of publication
1998
Pages
252 - 255
Database
ISI
SICI code
0040-6090(199812)336:1-2<252:LOOSGI>2.0.ZU;2-D
Abstract
Self-assembled Ge islands are weakly ordered along the intrinsic step direc tion when grown directly on well-prepared biatomic-stepped vicinal Si(001) surfaces. Prominent two-dimensional ordering of Ge islands is realized when a SiGe/Si multilayer is predeposited on such vicinal Si(001) surfaces and step-bunching takes place. The ordering helps to narrow the size distributi on of the Ge islands. This provides an effective method for controlling the Ge islands in both ordering and size. (C) 1998 Elsevier Science S.A. All r ights reserved.