Dislocation half loop formation in GaSb/(001)GaAs islands and steps role: a Monte Carlo simulation

Authors
Dalla Torre, J Rouhani, MD Landa, G Rocher, AM Malek, R Esteve, D
Citation
J. Dalla Torre et al., Dislocation half loop formation in GaSb/(001)GaAs islands and steps role: a Monte Carlo simulation, THIN SOL FI, 336(1-2), 1998, pp. 277-280
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
336
Issue
1-2
Year of publication
1998
Pages
277 - 280
Database
ISI
SICI code
0040-6090(199812)336:1-2<277:DHLFIG>2.0.ZU;2-3
Abstract
We have simulated the growth of GaSb/(001)GaAs, and we have focused our stu dy on the defects creation at the D-A and D-B double steps on the substrate . A Monte Carlo scheme associated with a valence force field approximation is used to describe, respectively, the kinetic and the strain effects in th e mis-matched film. These simulations indicate a strong localization of dis location half loops at the step edges in accordance with experimental obser vations. (C) 1998 Elsevier Science S.A. All rights reserved.