Determination of light amplification processes in MOCVD grown ZnCdSe GRINSCH structures

Authors
Mikulskas, I Brinkmann, D Luterova, K Tomasiunas, R Honerlage, B Vaitkus, JV Aulombard, RL Cloitre, T
Citation
I. Mikulskas et al., Determination of light amplification processes in MOCVD grown ZnCdSe GRINSCH structures, THIN SOL FI, 336(1-2), 1998, pp. 326-331
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
336
Issue
1-2
Year of publication
1998
Pages
326 - 331
Database
ISI
SICI code
0040-6090(199812)336:1-2<326:DOLAPI>2.0.ZU;2-#
Abstract
In this paper we present measurements of light amplification in optically p umped ZnCdSe graded refraction index separate confinement heterostructures (GRINSCH). In several differently designed samples we observe the presence of two gain mechanisms, which involve localized excitons and exciton-excito n inelastic scattering processes, respectively, The influence of the GRINSC H structure on gain is discussed with respect to light guiding variations d ue to sample design. A numerical simulation is used to investigate the phen omenon of gain quenching with decreasing barrier width. (C) 1998 Elsevier S cience S.A. All rights reserved.